Analytical Expression for the Tunneling Time in Symmetrical Rectangular Double-Barrier Structures

نویسندگان

  • H. Yamamoto
  • T. Hayashi
چکیده

An analytical expression for the electron tunneling time has been derived for symmetrical rectangular double-barrier structures. It gives values of the tunneling time equal to those calculated by the dwell time method for the resonant tunneling state. The obtained tunneling time is given by the sum of the time connected with the barrier layer width and the time connected with the well layer width. Moreover, the derived equation may lead to an approximate tunneling time for an off-resonance state.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

The Chemical Educator Exact solutions of the quantum double square well potential

For a symmetrical quantum double square well potential, we find analytical expressions satisfied by the quantized energies. Graphical or numerical solutions of the former relations allow us to calculate normalization constants and construct the first eight solutions of the Schrödinger equation. With these exact solutions, we analyze quantum tunneling across a potential barrier and compare our r...

متن کامل

Resonance Conditions in Asymmetrical Rectangular Double-Barrier Structures under DC Bias Field

Analytical expressions for the transmission coefficient and the resonance condition are derived for the first time for the asymmetrical rectangular double-barrier structures with deep well when a dc bias field is applied. It is found that the unity resonance of the resonant tunneling with unity transmission occurs when both the phase difference condition for resonance (PDCR) and the maximum con...

متن کامل

Relativistic Resonant Tunneling Lifetime for Double Barrier System

A relativistic study on lifetime of resonant tunneling states in the case of the double barrier system consisting of rectangular potential barriers has been studied. This study reveals the fact that as compared to the non-relativistic resonant tunneling states the relativistic resonant states occur in the lower energies but they are having shorter lifetime..

متن کامل

Gate VoltageDependence of theMagnetotransport in Double QuantumWells

We have investigated the gate-dependent magnetoresistance of strongly asymmetric double-well structures. The structures were prepared by inserting a thin Al0.3Ga0.7As barrier into the GaAs buffer layer of standard modulation-doped GaAs/Al0.3Ga0.7As heterojunctions. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the th...

متن کامل

In-planeMagnetic Field DependentMagnetoresistance of GatedAsymmetricDouble QuantumWells

We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al0.3Ga0.7As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al0.3Ga0.7As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the thin barri...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1998